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Si₃N₄ Silicon Carbide Nitride Electrical Conductivity Oxidation Resistance Silicium Nitride

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                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                si3n4 silicon carbide nitride, silicon carbide nitride electrical conductivity, oxidation resistance silicium nitride
                              

Features:	Wear-resistant	Usage:	Harsh Environment
Quality Control:	100% Inspection	Blade Material:	Silicon Nitride Ceramic
Wattage Density:	2~25W/cm2	Roughness:	0.1um
Port:	Shanghai	High Purity:	99.9%
Thermal Expansion Coefficient:	3.2 X 10^-6 /K	Corrosion Resistance:	High
Material:	Silicon Nitride	Logo:	Laser Engraving
Heating Wire:	NiCr80/20	Wear Resistance:	High
Color:	Gray

Features:	Wear-resistant
Usage:	Harsh Environment
Quality Control:	100% Inspection
Blade Material:	Silicon Nitride Ceramic
Wattage Density:	2~25W/cm2
Roughness:	0.1um
Port:	Shanghai
High Purity:	99.9%
Thermal Expansion Coefficient:	3.2 X 10^-6 /K
Corrosion Resistance:	High
Material:	Silicon Nitride
Logo:	Laser Engraving
Heating Wire:	NiCr80/20
Wear Resistance:	High
Color:	Gray

Si₃N₄ Silicon Carbide Nitride Electrical Conductivity Oxidation Resistance Silicium Nitride

Si₃N₄ Silicon Carbide Nitride Electrical Conductivity Oxidation Resistance Silicium Nitride 0

Silicon nitride(Si₃N₄)exceeds many other ceramic materials in thermal shock-resistance.It does not deteriorate at high temperatures;therefore,it is ideal for use in components for automotive engines and gas turbines-including turbocharger rotors,glow plugs for diesel engines,and hot plugs.Further applications of this material are anticipated in a wide range of fields.

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